Superconductivity in a Hole-Doped Mott-Insulating Triangular Adatom Layer on a Silicon Surface
نویسندگان
چکیده
منابع مشابه
Superconductivity in a doped mott insulator
Starting from the d-wave resonating-valence-bond mean-field theory of Kotliar and Liu, we present a new, long-wavelength/low-energy exact, treatment of gauge fluctuations. The result is a theory of gapless fermion quasiparticles coupled to superconducting phase fluctuations. We will discuss the physical implications, and the similarity and differences to a theory of superconductors with phase f...
متن کاملd-Wave superconductivity in doped Mott insulators
The effect of proximity to a Mott insulating phase on the charge transport properties of a superconductor is determined. An action describing the low energy physics is formulated and different scenarios for the approach to the Mott phase are distinguished by different variation with doping of the parameters in the action. A crucial issue is found to be the doping dependence of the quasiparticle...
متن کاملMetallic surface of a Mott insulator - Mott insulating surface of a metal
The dynamical mean-field theory (DMFT) is employed to study the correlation-driven metal-insulator transition in the semi-infinite Hubbard model at half-filling and zero temperature. We consider the low-index surfaces of the three-dimensional simple-cubic lattice and systematically vary the model parameters at the very surface , the intra-and inter-layer surface hopping and the surface Coulomb ...
متن کاملSuperconductivity in carrier-doped silicon carbide.
We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperature Tc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity with Tc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility below Tc with effective hole...
متن کاملSuperconductivity in heavily boron-doped silicon carbide.
The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2020
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.125.117001